3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab


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We fabricated 3300V Silicon Carbide (SiC) DMOSFETs on 150mm substrates in a high volume automotive qualified Si CMOS foundry. In this paper we will show that JFET optimization can yield noticeable improvements in on-state performance without exceeding acceptable gate oxide electric fields. For the optimized design, breakdown voltages (BV) in excess of 3900V are observed along with a specific on resistance of 13.5mOhm-cm2 at room temperature and 30mOhm-cm2 at 150°C.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




B. Powell et al., "3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab", Materials Science Forum, Vol. 924, pp. 731-734, 2018

Online since:

June 2018




* - Corresponding Author

[1] S. Banerjee, K. Matocha, K. Chatty, J. Nowak, B. Powell, D. Gutierrez, C. Hundley, Manufacturable and Rugged 1.2 KV SiC MOSFETs Fabricated in High-Volume 150mm CMOS Fab, Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and IC's, 2016, 279-282.

DOI: https://doi.org/10.1109/ispsd.2016.7520832

[2] K. Hamada, S. Hino, T Kitani, Low On-Resistance SiC-MOSFET with a 3.3kV Blocking Voltage, Mitsubishi Electric Adv. 149 (2015) 14-17.

[3] T Tsuji, H. Shiomi, N Ohse, Y. Onishi, K. Fukuda, 3300V-class 4H SiC Implantation-Epitaxial MOSFETs with Low Specific On-resistance of 11.6mΩcm2 and High Avalanche Withstanding Capability, Mat. Sci. Forum 858 (2015) 962-965.

DOI: https://doi.org/10.4028/www.scientific.net/msf.858.962