Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET

Abstract:

Article Preview

Wide bandgap materials such as Silicon Carbide (SiC) has enabled the use of medium voltage unipolar devices like Metal-Oxide Field Effect Transistors (MOSFETs) and Junction Field Effect Transistors (JFETs), which can switch at much higher frequencies as compared to their silicon counterparts. It is therefore imperative to evaluate the performance of these medium voltage devices. In this paper, the static characterization and the switching performance of the new single die 3.3 kV, 45 A 4H-SiC MOSFET developed by Cree Inc are presented. The switching performance is measured through the conventional Double Pulse Test. Testing is done at a dc-link voltage of 1.5 kV for different values of current, and gate resistances.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

739-742

Citation:

A. Anurag et al., "Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET", Materials Science Forum, Vol. 924, pp. 739-742, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] A. Marzoughi and R. Burgos and D. Boroyevich, Characterization and comparison of latest generation 900-V and 1.2-kV SiC MOSFETs,, IEEE Energy Conversion Congress and Exposition (ECCE), 1-8, (2016).

DOI: https://doi.org/10.1109/ecce.2016.7854911

[2] Information on http://www.wolfspeed.com.

[3] A.Marzoughi; J. Wang; R. Burgos; D. Borojevic, Characterization and Evaluation of the State-of-the-Art 3.3 kV 400 A SiC MOSFETs,, IEEE Transactions on Industrial Electronics, vol. PP, no. 99, pp.1-1 (early access).

[4] S. H. Ryu, S. Krishnaswami, B. Hull, J. Richmond, A. Agarwal, and A. Hefner, 10 kV, 5A 4H-SiC power DMOSFET,, Proc. ISPSD, p.14, Jun. (2006).

DOI: https://doi.org/10.1109/ispsd.2006.1666122

[5] A.Bolotnikov et al., 3.3kV SiC MOSFETs designed for low on-resistance and fast switching,, 24th International Symposium on Power Semiconductor Devices and ICs, Bruges, 2012, pp.389-392, (2012).

DOI: https://doi.org/10.1109/ispsd.2012.6229103

[6] H. Kono, M. Furukawa, K. Ariyoshi, T. Suzuki, Y. Tanaka, T. Shinohe, 14.6 mΩcm2 3.3 kV DIMOSFET on 4H-SiC,, Materials Science Forum, Vols. 778-780, pp.935-938, (2014).

DOI: https://doi.org/10.4028/www.scientific.net/msf.778-780.935

[7] M. Sakai, S. Toyoshima, K. Wada, M. Furumai, T. Tsuno and Y. Mikamura, 3.3 kV SiC power module with low switching loss,, Journal of SEI technical review, vol. 81, Oct. (2015).

[8] A. Kadavelugu and S. Bhattacharya, Design considerations and development of gate driver for 15 kV SiC IGBT,, IEEE Applied Power Electronics Conference and Exposition, Fort Worth, TX, pp.1494-1501, (2014).

DOI: https://doi.org/10.1109/apec.2014.6803505

Fetching data from Crossref.
This may take some time to load.