Comparison of Single- and Double-Trench UMOSFETs in 4H-SiC
Silicon carbide (SiC) trench MOSFETs, or UMOSFETs, generally exhibit lower specific on-resistance than planar DMOSFETs due to a more compact unit cell, higher electron mobility on the a-face surface, and the absence of a JFET region. In this paper we compare the performance of two types of trench UMOSFETs based on 2-D SentaurusTM Device simulations, and show that the single-trench oxide-protected structure exhibits ~40% lower specific on-resistance and half the peak oxide field of the double-trench design when both are optimized for maximum figure of merit.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
M. Sampath et al., "Comparison of Single- and Double-Trench UMOSFETs in 4H-SiC", Materials Science Forum, Vol. 924, pp. 752-755, 2018