Impact of Cell Geometry on Zero-Energy Turn-Off of SiC Power MOSFETs
1200V SiC power MOSFETs of various cell geometries are modeled in Synopsis Inc. Sentaurus TCAD. The impact of cell geometry on switching loss is studied by comparing the turn-on and turn-off losses using refined calculation methods. Under optimum circuit conditions, two different novel unit cell designs each achieve lower switching losses than conventional designs. For all the designs, lossless turn-on is impossible but lossless turn-off is achievable under circuit and biasing conditions that produce sufficiently rapid gate slew.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
X. Liu et al., "Impact of Cell Geometry on Zero-Energy Turn-Off of SiC Power MOSFETs", Materials Science Forum, Vol. 924, pp. 756-760, 2018