Impact of Cell Geometry on Zero-Energy Turn-Off of SiC Power MOSFETs

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1200V SiC power MOSFETs of various cell geometries are modeled in Synopsis Inc. Sentaurus TCAD. The impact of cell geometry on switching loss is studied by comparing the turn-on and turn-off losses using refined calculation methods. Under optimum circuit conditions, two different novel unit cell designs each achieve lower switching losses than conventional designs. For all the designs, lossless turn-on is impossible but lossless turn-off is achievable under circuit and biasing conditions that produce sufficiently rapid gate slew.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

756-760

Citation:

X. Liu et al., "Impact of Cell Geometry on Zero-Energy Turn-Off of SiC Power MOSFETs", Materials Science Forum, Vol. 924, pp. 756-760, 2018

Online since:

June 2018

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$38.00

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