Development of a High-Performance 3,300V Silicon Carbide MOSFET

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To address stringent performance and reliability requirements of industrial and traction power conversion systems we have developed planar 3,300V MOSFETs at a 6-inch SiC-compatible silicon CMOS foundry. By optimizing the unit cell structure and using a deep current-spreading layer we demonstrated a low MOSFET specific on-resistance RDSA=11.2 mΩ·cm2 (ID=5A, VGS=15V) and fast switching for the baseline design. Robust short-circuit handling (7.5μs at Vds=1500V and 5.0μs at Vds=2200V) was demonstrated with an alternative unit cell design with RDSA=14.8 mΩ·cm2 (ID=5A, VGS=15V).

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

770-773

Citation:

L. Fursin et al., "Development of a High-Performance 3,300V Silicon Carbide MOSFET", Materials Science Forum, Vol. 924, pp. 770-773, 2018

Online since:

June 2018

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$38.00

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