Comparison of 3C-SiC and 4H-SiC Power MOSFETs


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A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation. This includes the bulk mobility as a function of doping density, the breakdown field as a function of doping and the MOSFET channel mobility. A device model was constructed and then used to calculate the on-resistance and breakdown voltage of a properly scaled device as a function of the doping density of the blocking layer. A SPICE model was constructed to explore the switching transients and switching losses. The simulations indicate that, for the chosen material parameters, a 600 V 3C-SiC MOSFET has an on-resistance, which is less than half that of a 4H-SiC MOSFET as are the switching losses in the device.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




B. van Zeghbroeck and H. Fardi, "Comparison of 3C-SiC and 4H-SiC Power MOSFETs", Materials Science Forum, Vol. 924, pp. 774-777, 2018

Online since:

June 2018




* - Corresponding Author

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