Investigation of the Robust Edge Termination Applied to 6.5kV SiC MOSFET

Abstract:

Article Preview

High breakdown voltage and smaller size of edge termination are required in SiC power devices. We simulated reverse bias characteristics of a variety of edge terminations targeting 6.5 kV MOSFET and the FLR showed the best trade-off between the size and the implanted Al dose. Fabricated pn diode TEGs with a FLR demonstrated over 6.5 kV breakdown voltage. We observed the avalanche breakdown visually by light emission and it corresponded to the simulated electric field. These indicate that we can fabricate the desirable FLR for 6.5 kV MOSFET.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

778-781

Citation:

K. Ebihara et al., "Investigation of the Robust Edge Termination Applied to 6.5kV SiC MOSFET", Materials Science Forum, Vol. 924, pp. 778-781, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] http://www.mitsubishielectric.com/news/2013/1225.html.

[2] K. Kawahara et al., Proceedings of ISPSD 2017, Sapporo, Japan, May 28 – June 1, (2017).

[3] G. Feng et al., IEEE Trans. Electron Devices, 59 (2012) 414.