Planar to Trench: Short Circuit Capability Analysis of 1.2 kV SiC MOSFETs

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This paper presents an insight into the short circuit (SC) capability of Rohm’s discrete 1.2 kV, 80 mΩ state-of-the-art silicon carbide (SiC) double trench metal-oxide-semiconductor field effect transistor (MOSFET). SC measurements are performed to compare the behavior of Wolfspeed’s similarly rated 1.2 kV, 80 mΩ planar MOSFET with the Rohm trench devices. Short circuit withstand time (SCWT) of both designs under nominal operating conditions at room temperature is measured by performing destructive SC tests.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

782-785

Citation:

B. Kakarla et al., "Planar to Trench: Short Circuit Capability Analysis of 1.2 kV SiC MOSFETs", Materials Science Forum, Vol. 924, pp. 782-785, 2018

Online since:

June 2018

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