Continuous Compact Model of a SiC VDMOSFET Based on Surface Potential Theory

Abstract:

Article Preview

Fast and accurate compact models of Silicon Carbide (SiC) power semiconductors are necessary for the development and optimization of SiC power integrated circuits. This paper presents a new physics based compact model for vertical SiC MOSFETs. The proposed model is able to accurately simulate device characteristics by iteratively calculating the surface potential under consideration of important material and geometry effects.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

786-789

Citation:

B. Jäger et al., "Continuous Compact Model of a SiC VDMOSFET Based on Surface Potential Theory", Materials Science Forum, Vol. 924, pp. 786-789, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] J. R. Brews, Solid-State Electronics, vol. 21, pp.345-355, (1978).

[2] S. Potbhare, N. Goldsman, A. Lelis, J. M. McGarrity, F. B. McLean, and D. Habersat, IEEE Transactions on Electron Devices, vol. 55, pp.2029-2040, (2008).

DOI: https://doi.org/10.1109/ted.2008.926665

[3] R. Schörner, P.Friedrichs, D. Peters, and D. Stephani, IEEE Electron Device Letters, vol. 20, pp.241-244, (1999).

[4] M. Miura-Mattausch, H. J. Mattausch, and T. Ezaki: WORLD SCIENTIFIC, pp.96-103, (2011).

[5] Wolfspeed. (22.08.2017). C2M0080120D 80-mΩ 1200-V SiC MOSFET. Available: http://www.wolfspeed.com/c2m0080120d.