SiC MOSFET Device Parameter Spread and Ruggedness of Parallel Multichip Structures


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This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identified and selected, presenting experimental evidence of their impact during transient overload events. An advanced physics-based simulation model is then employed to extend the analysis to a more comprehensive set of parameters and operational conditions.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




A. Castellazzi et al., "SiC MOSFET Device Parameter Spread and Ruggedness of Parallel Multichip Structures", Materials Science Forum, Vol. 924, pp. 811-817, 2018

Online since:

June 2018




* - Corresponding Author

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