SiC MOSFET Device Parameter Spread and Ruggedness of Parallel Multichip Structures


Article Preview

This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identified and selected, presenting experimental evidence of their impact during transient overload events. An advanced physics-based simulation model is then employed to extend the analysis to a more comprehensive set of parameters and operational conditions.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




A. Castellazzi et al., "SiC MOSFET Device Parameter Spread and Ruggedness of Parallel Multichip Structures", Materials Science Forum, Vol. 924, pp. 811-817, 2018

Online since:

June 2018




* - Corresponding Author

[1] Castellazzi, A., J. Saiz, and M. Mermet-Guyennet. Experimental characterisation and modelling of high-voltage IGBT modules off-state thermal instability." In Power Electronics and Applications, 2009. EPE,09. 13th European Conference on, pp.1-9. IEEE, (2009).


[2] Perpina, X., A. Castellazzi, M. Piton, G. Lourdel, M. Mermet-Guyennet, and J. Rebollo. Temperature Distribution and Short Circuit Events in IGBT-Modules used in Traction Inverters., In Industrial Electronics, 2007. ISIE 2007. IEEE International Symposium on, pp.799-804. IEEE, (2007).


[3] Castellazzi, A., A. Fayyaz, G. Romano, M. Riccio, A. Irace, J. Urresti-Ibanez, and N. Wright. Transient out-of-SOA robustness of SiC power MOSFETs., In Reliability Physics Symposium (IRPS), 2017 IEEE International, pp. 2A-3. IEEE, (2017).


[4] Castellazzi, A., A. Fayyaz, G. Romano, L. Yang, M. Riccio, and A. Irace. SiC power MOSFETs performance, robustness and technology maturity., Microelectronics Reliability 58 (2016): 164-176.


[5] Kraus, Rainer, and Alberto Castellazzi. A physics-based compact model of SiC power MOSFETs., IEEE Transactions on Power Electronics 31, no. 8 (2016): 5863-5870.


[6] Mantooth, Homer Alan, Kang Peng, Enrico Santi, and Jerry L. Hudgins. Modeling of wide bandgap power semiconductor devices—Part I., IEEE Transactions on Electron Devices 62, no. 2 (2015): 423-433.


[7] d'Alessandro, V., A. Magnani, M. Riccio, G. Breglio, A. Irace, N. Rinaldi, and A. Castellazzi. SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs." In Power Semiconductor Devices & IC,s (ISPSD), 2014 IEEE 26th International Symposium on, pp.285-288. IEEE, (2014).