An Experimental Demonstration of Short Circuit Protection of SiC Devices

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An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

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818-821

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E. Aeloiza et al., "An Experimental Demonstration of Short Circuit Protection of SiC Devices", Materials Science Forum, Vol. 924, pp. 818-821, 2018

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June 2018

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