650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Modules

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In this paper, we present our latest results on 650 V 4H-SiC DMOSFET developments for dual-side sintered power modules in electric drive vehicles. A low specific on-resistance (Rsp,on) of 1.8 mΩ⋅cm2 has been achieved on 650 V, 7 mΩ 4H-SiC DMOSFETs at 25°C, which increases to 2.4 mΩ⋅cm2 at 150°C. For the first time, the DMOSFET chip is designed specifically for use in dual-side soldering and sintering processes, and a 650 V, 1.7 mΩ SiC DMOSFET multichip half bridge power module has been built using the wirebond-free assembly. Compared to a similarly rated Si IGBT module, the conduction and switching losses were reduced by 80% and ~50%, respectively.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

822-826

Citation:

J. Q. Zhang et al., "650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Modules", Materials Science Forum, Vol. 924, pp. 822-826, 2018

Online since:

June 2018

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