30 kV Pulse Diode Stack Based on 4H-SiC


Article Preview

The paper reports on the studies of static and dynamic characteristics of 30 kV diode stacks based on 4H-SiC drift step recovery diodes (DSRDs). It was found that the optimal performance in terms of blocking voltage and switching speed can be achieved with 2 kV DSRD dies. Fifteen 2 kV DSRD dies were connected in series and sealed with molding compound. The stacks were dynamically tested in a special oscillator circuit. Repetitive voltage pulses of 30.5 kV with the leading edge of 1.6 ns were demonstrated.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




V. A. Ilyin et al., "30 kV Pulse Diode Stack Based on 4H-SiC", Materials Science Forum, Vol. 924, pp. 841-844, 2018

Online since:

June 2018




* - Corresponding Author

[1] I.V. Grekhov, V.M. Efanov, A.F. Kardo-Sysoev and S.V. Shenderey, Power Drift Step Recovery Diodes, Solid-State Electronics, 28 (1985) 597-599.

DOI: https://doi.org/10.1016/0038-1101(85)90130-3

[2] I.V. Grekhov, P.A. Ivanov, A.O. Konstantinov and T.P. Samsonova, On the Possibility of Creating a Superfast-Recovery Silicon Carbide Diode, Technical Physics Letters, 28 (2002) 544-546.

DOI: https://doi.org/10.1134/1.1498779

[3] A.V. Afanasyev, B.V. Ivanov, V.A. Ilyin, A.F. Kardo-Sysoev, M.A. Kuznetsova and V.V. Luchinin, Superfast drift step recovery diodes (DSRDs) and vacuum field emission diodes based on 4H-SiC, Materials Science Forum 740-742 (2013) 1010-1013.

DOI: https://doi.org/10.4028/www.scientific.net/msf.740-742.1010

[4] V.A. Ilyin, A.V. Afanasyev, B.V. Ivanov, A.F. Kardo-Sysoev, V.V. Luchinin, S.A. Reshanov, A. Schöner, K.A. Sergushichev and A.A. Smirnov, High-voltage ultra-fast pulse diode stack based on 4H-SiC, Materials Science Forum 858 (2016) 786-789.

DOI: https://doi.org/10.4028/www.scientific.net/msf.858.786