30 kV Pulse Diode Stack Based on 4H-SiC
The paper reports on the studies of static and dynamic characteristics of 30 kV diode stacks based on 4H-SiC drift step recovery diodes (DSRDs). It was found that the optimal performance in terms of blocking voltage and switching speed can be achieved with 2 kV DSRD dies. Fifteen 2 kV DSRD dies were connected in series and sealed with molding compound. The stacks were dynamically tested in a special oscillator circuit. Repetitive voltage pulses of 30.5 kV with the leading edge of 1.6 ns were demonstrated.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
V. A. Ilyin et al., "30 kV Pulse Diode Stack Based on 4H-SiC", Materials Science Forum, Vol. 924, pp. 841-844, 2018