30 kV Pulse Diode Stack Based on 4H-SiC

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The paper reports on the studies of static and dynamic characteristics of 30 kV diode stacks based on 4H-SiC drift step recovery diodes (DSRDs). It was found that the optimal performance in terms of blocking voltage and switching speed can be achieved with 2 kV DSRD dies. Fifteen 2 kV DSRD dies were connected in series and sealed with molding compound. The stacks were dynamically tested in a special oscillator circuit. Repetitive voltage pulses of 30.5 kV with the leading edge of 1.6 ns were demonstrated.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

841-844

Citation:

V. A. Ilyin et al., "30 kV Pulse Diode Stack Based on 4H-SiC", Materials Science Forum, Vol. 924, pp. 841-844, 2018

Online since:

June 2018

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