High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

Abstract:

Article Preview

Aluminum nitride (AlN) single crystal boules were grown by physical vapor transport (PVT). Diameter expansion during boule growth, without the introduction of low angle grain boundaries (LAGB) around the boule periphery, was confirmed by crossed polarizer imaging, synchrotron white beam x-ray topography (SWBXT), and synchrotron monochromatic beam x-ray topography (SMBXT). The densities of basal plane dislocations (BPD) and threading edge dislocations (TED) averaged from high-magnification topographs of five regions of a high-quality substrate were 0 cm-2 and 992 cm-2, respectively. Substrates fabricated from AlN boules possessed excellent surface finishes suitable for epitaxy.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

923-926

Citation:

R. Dalmau et al., "High Quality AlN Single Crystal Substrates for AlGaN-Based Devices", Materials Science Forum, Vol. 924, pp. 923-926, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] R. Dalmau, Z. Sitar, AlN bulk crystal growth by physical vapor transport, in: G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley (Eds.), Handbook of Crystal Growth, Springer, Berlin, 2010, pp.821-843.

DOI: https://doi.org/10.1007/978-3-540-74761-1_24

[2] B. Raghothamachar, G. Dhanaraj, M. Dudley, X-ray topography techniques for defect characterization of crystals, in: G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley (Eds.), Handbook of Crystal Growth, Springer, Berlin, 2010, pp.1425-1451.

DOI: https://doi.org/10.1007/978-3-540-74761-1_42

[3] R. Schlesser, R. Dalmau, Z. Sitar, J. Cryst. Growth 241 (2002) 416-420.

[4] P. Lu, R. Collazo, R. F. Dalmau, G. Durkaya, N. Dietz, B. Raghothamachar, M. Dudley, Z. Sitar, J. Cryst. Growth 312 (2009) 58-63.

DOI: https://doi.org/10.1016/j.jcrysgro.2009.10.008

[5] R. Dalmau, B. Moody, J. Xie, R. Collazo, Z. Sitar, Phys. Stat. Sol. A 208 (2011) 1545-1547.

[6] B. Raghothamachar, R. Dalmau, B. Moody, S. Craft, R. Schlesser, J. Xie, R. Collazo, M. Dudley, Z. Sitar, Mater. Sci. Forum 717-720 (2012) 1287-1290.

DOI: https://doi.org/10.4028/www.scientific.net/msf.717-720.1287

[7] B. Raghothamachar, Y. Yang, R. Dalmau, B. Moody, S. Craft, R. Schlesser, M. Dudley, Z. Sitar, Mater. Sci. Forum 740-742 (2013) 91-94.

DOI: https://doi.org/10.4028/www.scientific.net/msf.740-742.91

[8] T. Zhou, B. Raghothamachar, F. Wu, R. Dalmau, B. Moody, S. Craft, R. Schlesser, M. Dudley, Z. Sitar, J. Electron. Mater. 43 (2014) 838-842.

DOI: https://doi.org/10.1007/s11664-013-2968-2

[9] E. K. Sanchez, S. Ha, J. Grim, M. Skowronski, W. M. Vetter, M. Dudley, R. Bertke, W. C. Mitchel, J. Electrochem. Soc. 149 (2002) G131-G136.

DOI: https://doi.org/10.1149/1.1430416

[10] M. Bobea, J. Tweedie, I. Bryan, Z. Bryan, A. Rice, R. Dalmau, J. Xie, R. Collzao, Z. Sitar, J. Appl. Phys. 113 (2013) 123508.

[11] J. Huang, K. Xu, X. J. Gong, J. F. Wang, Y. M. Fang, J. Q. Liu, X. H. Zeng, G. Q. Ren, T. F. Zhou, H. Yang, Appl. Phys. Lett. 98 (2011) 221906.

[12] R. Dalmau, B. Moody, R. Schlesser, S. Mita, J. Xie, M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, J. Tweedie, Z. Sitar, J. Electrochem Soc. 158 (2011) H530-H535.

DOI: https://doi.org/10.1149/1.3560527

Fetching data from Crossref.
This may take some time to load.