Analysis of ZrxSiyOz as High-k Dielectric for 4H-SiC MOSFETs

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This paper deals with investigation and fabrication of 4H-SiC MOSFETs with a high-k dielectric close to ZrSiO4. We are looking for the optimal stochiometry in order to obtain full benefits of its large bandgap, a k value higher than that of SiO2, thermodynamic stability on SiC, a good interface quality and process compatibility with SiC technology. Several Si/Zr ratios have been tested with the purpose of obtaining the most favorable dielectric configuration. The first test devices have been manufactured successfully with a stack gate dielectric consisting of a thin SiO2 interlayer and a ZrxSiyOz (theoretical Si/Z=0.7) layer on top.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

939-942

Citation:

M. Cabello et al., "Analysis of ZrxSiyOz as High-k Dielectric for 4H-SiC MOSFETs", Materials Science Forum, Vol. 924, pp. 939-942, 2018

Online since:

June 2018

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$38.00

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