Electrochemical Formation of Porous Silicon Carbide for Micro-Device Applications


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Anodization of silicon carbide (SiC) in hydrofluoric acid (HF) solutions is a promising way to etch this material which is very resistant against traditional chemical etching methods. Moreover, it has been shown that several reproducible porous SiC morphologies can be performed varying anodization conditions (current density, electrolyte composition, UV lighting) and/or substrate properties (doping type and level). This paper proposes a state of the art of porous SiC etching in GREMAN and a presentation of the morphologies achievable using anodization in HF based electrolytes.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




G. Gautier et al., "Electrochemical Formation of Porous Silicon Carbide for Micro-Device Applications", Materials Science Forum, Vol. 924, pp. 943-946, 2018

Online since:

June 2018




* - Corresponding Author

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