Electrochemical Formation of Porous Silicon Carbide for Micro-Device Applications

Abstract:

Article Preview

Anodization of silicon carbide (SiC) in hydrofluoric acid (HF) solutions is a promising way to etch this material which is very resistant against traditional chemical etching methods. Moreover, it has been shown that several reproducible porous SiC morphologies can be performed varying anodization conditions (current density, electrolyte composition, UV lighting) and/or substrate properties (doping type and level). This paper proposes a state of the art of porous SiC etching in GREMAN and a presentation of the morphologies achievable using anodization in HF based electrolytes.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

943-946

Citation:

G. Gautier et al., "Electrochemical Formation of Porous Silicon Carbide for Micro-Device Applications", Materials Science Forum, Vol. 924, pp. 943-946, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] J.S. Shor, I. Grimberg, B. Weiss, A.D. Kurtz, Direct observation of porous SiC formed by anodization in HF, Appl. Phys. Lett. 62 (1993), 2836-2838.

DOI: https://doi.org/10.1063/1.109226

[2] T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura, Y. Kanemitsu, Blue‐green luminescence from porous silicon carbide, Appl. Phys. Lett. 64(2) (1994) 226-228.

DOI: https://doi.org/10.1063/1.111979

[3] E.J. Connolly, H.T.M. Pham, J. Groeneweg, P.M. Sarro, P.J. French, Relative humidity sensors using porous SiC membranes and Al electrodes, Sens. Actuators B 100 (2004) 216-220.

DOI: https://doi.org/10.1016/j.snb.2003.12.064

[4] Leigh Canham, Porous Silicon Handbook, Spronger Inspec Publishing Ed., (2014).

[5] G. Gautier, M. Capelle, F. Cayrel, J. Billoué, P. Poveda, X. Song, J-F. Michaud, Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces, Nanoscale Research Lett. 7 (2012).

DOI: https://doi.org/10.1186/1556-276x-7-367

[6] G. Gautier, J. Biscarrat, D. Valente, A. Gary and F. Cayrel, Systematic study of anodic etching of highly doped n-type 4H SiC in various HF based electrolytes, J. of Electrochem.Soc. 160 (2013) D372-D379.

DOI: https://doi.org/10.1149/2.082309jes

[7] P. Newby, J.M. Bluet,V. Aimez, L. Fréchette, V. Lysenko, Structural properties of porous 6H silicon carbide, Phys. Stat. Sol. (c) 8(6) (2011) 1950-(1953).

DOI: https://doi.org/10.1002/pssc.201000222

[8] G. Gautier, M. Capelle, J. Billoué, F. Cayrel, P. Poveda, RF planar inductor electrical performances on n type porous 4H silicon carbide, IEEE Electron Device Lett. 33(4) (2012) 477-479.

DOI: https://doi.org/10.1109/led.2012.2185478

Fetching data from Crossref.
This may take some time to load.