Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology

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This work presents the design and electrical characterization of in-house-fabricated 2-input NAND gate. The monolithic bipolar 2-input NAND gate employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC and operates over a wide range of temperature and supply voltage.The fabricated circuit was characterized on the wafer by using a hot-chuck probe-station from 25 °C up to 500 °C. The circuit is also characterized over a wide range of voltage supply i.e. 11 to 20 V. The output-noise margin high (NMH) and output-noise margin low (NML) are also measured over a wide range of temperatures and supply voltages using voltage transfer characteristics (VTC). The transient response was measured by applying two square waves of, 5 kHz and 10 kHz. It is demonstrated that the dynamic parameters of the circuit are temperature dependent. The 2-input TTL NAND gate consumes 20 mW at 500 °C and 15 V.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

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958-961

Citation:

M. Shakir et al., "Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology", Materials Science Forum, Vol. 924, pp. 958-961, 2018

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June 2018

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