High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes


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Two characterization methods are compared in terms of their suitability for predicting the electrical behavior of non-uniform Ni/4H-SiC Schottky contacts up to 450°C, using data measured at lower temperatures. These techniques are based on the established Gaussian distribution of barrier heights model and a recently proposed discrete barrier distribution model, respectively. Two samples with different degrees of contact inhomogeneity are measured and their forward characteristics are fitted using both techniques. The Gaussian distribution approach is shown to accurately fit experimental data only for the nearly-uniform sample, while requiring the extraction of two separate barrier height values from measurements in the room-250°C range, only. When attempting to use this method to characterize the sample with strong non-uniformity, fitting accuracy (given by R2) drops under 90%. In contrast, the discrete barrier distribution technique is proven able to forecast the electrical behavior of both samples (with R2 > 99% in most cases), over the entire room-450°C range, using a single Schottky barrier for each device (1.61V, corresponding to a Ni2Si Schottky contact and 0.9V, afferent to a Ni metallization).



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




G. Pristavu et al., "High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes", Materials Science Forum, Vol. 924, pp. 967-970, 2018

Online since:

June 2018




* - Corresponding Author

[1] J. Yu-Long et al., Chin. Phys. Lett. 19, (2002), 553–556.

[2] Murat Gülnahar, Superlattices and Microstructures, 76, (2014), 394.

[3] G. Pristavu, et al., Appl. Phys. Lett., 106, (2015), 261605.

[4] G. Brezeanu, G. Pristavu, F. Draghici, M. Badila, R. Pascu,J. Appl. Phys, 122, (2017), 084501.

[5] J. H. Werner, H. Güttler, J. Appl. Phys., 69, 1522 (1991).

[6] F. Roccaforte, et al., J. Appl. Phys., 93, (2003), 9137-9144.

[7] G. Brezeanu et al., Int. Semicond. Conf. (CAS), (2015), 3-10.