Complementary p-Channel and n-Channel SiC MOSFETs for CMOS Integration

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The fabrication of CMOS devices in SiC is important for both a higher operating temperature capability and the integration with SiC power devices. In this work, n-channel and p-channel signal MOSFETs have been successfully fabricated using a process technology fully compatible with our HV SiC VDMOS technology. A preliminary SiC CMOS inverter has been also integrated. The gate oxide configuration includes the use of Boron to improve SiO2/SiC. Electrical characterizations have been carried out at room temperature and a summary of the results is presented. The biggest challenge is to balance the n-type and p-type MOSFETs not only in area but also in Vth value.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

975-979

Citation:

V. Soler et al., "Complementary p-Channel and n-Channel SiC MOSFETs for CMOS Integration", Materials Science Forum, Vol. 924, pp. 975-979, 2018

Online since:

June 2018

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$38.00

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[1] Alexandru, M., et al., Design of Logic Gates for High Temperature and Harsh Radiation Environment Made of 4H-SiC MESFET,, IEEE 33rd International Semiconductor Conference (CAS), 2010..

DOI: https://doi.org/10.1109/smicnd.2010.5650597

[2] Godignon, P., et al., New Trends in High Voltage MOSFET Based on Wide Band Gap Materials, IEEE 40th International Semiconductor Conference (CAS), 2017..

DOI: https://doi.org/10.1109/smicnd.2017.8101143

[3] Clark, D. T., et al., High Temperature Silicon Carbide CMOS Integrated Circuits,, Materials Science Forum, Vols. 679-680, pp.726-729, 2011..

[4] Soler, V., et al., High Voltage 4H-SiC Power MOSFETs with Boron doped gate oxide, IEEE Trans. Ind. Electron., vol. PP, no. 99, July 2017..

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