An Improved I-V Model of GaN HEMT for High Temperature Applications

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The lack of the high temperature I-V model greatly restricts the application of GaN HEMT devices. In this paper, the characteristic variation of GaN HEMT device under high temperature condition is investigated, and an improved I-V characteristics model of GaN HEMT transistors over a wide temperature range from 25°C to 300°C is proposed based on the classic Statz model. The experimental results indicate that the improved spice model, by taking the self-heating effect into account, is more accurate compared to the original Statz model. The proposed I-V model should be an available tool for the simulation of GaN HEMT device in designing integrated circuits at high temperature.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

980-983

Citation:

J. Yang et al., "An Improved I-V Model of GaN HEMT for High Temperature Applications", Materials Science Forum, Vol. 924, pp. 980-983, 2018

Online since:

June 2018

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$38.00

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