An Improved I-V Model of GaN HEMT for High Temperature Applications
The lack of the high temperature I-V model greatly restricts the application of GaN HEMT devices. In this paper, the characteristic variation of GaN HEMT device under high temperature condition is investigated, and an improved I-V characteristics model of GaN HEMT transistors over a wide temperature range from 25°C to 300°C is proposed based on the classic Statz model. The experimental results indicate that the improved spice model, by taking the self-heating effect into account, is more accurate compared to the original Statz model. The proposed I-V model should be an available tool for the simulation of GaN HEMT device in designing integrated circuits at high temperature.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
J. Yang et al., "An Improved I-V Model of GaN HEMT for High Temperature Applications", Materials Science Forum, Vol. 924, pp. 980-983, 2018