Electrical Characterization of the Operational Amplifier Consisting of 4H-SiC MOSFETs after Gamma Irradiation

Abstract:

Article Preview

The operational amplifier (op-amp) with high gamma irradiation capability of over 30 kGy have been fabricated by 4H-SiC MOSFETs for measuring instruments which are installed in nuclear power plants. The chip size was 0.7 mm x 1.0 mm, and they consisted of five n-channel MOSFETs and three p-channel MOSFETs on the same die. The output waveform after having irradiated 50 kGy at a rate of 60 Gy/hr was amplified without distortion. On the other hand, the offset voltage became unstable when gamma integral dose was beyond 30 kGy and it at 50 kGy increased to +7.2 mV. For reduction of gamma irradiation influence, we proposed the MOSFETs structure which has field plate (FP) electrodes connected to isolation layer electrically. We indicated that the proposal device had the potential of gamma irradiation capability of 100 kGy experimentally.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

984-987

Citation:

M. Masunaga et al., "Electrical Characterization of the Operational Amplifier Consisting of 4H-SiC MOSFETs after Gamma Irradiation", Materials Science Forum, Vol. 924, pp. 984-987, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] F. Gao, W. J. Weber, and R. Devanathan, Defect production, multiple ion-solid interactions and amorphization in SiC, Nucl. Instrum. Meth. Phys. Res. B, 191 (2002) 487–496.

[2] F. Moscatelli, A. Scorzoni, A. Poggi, M. Bruzzi, S. Sciortino, S. Lagomarsino, G. Wagner, I. Mandic, and R. Nipoti, Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup+/n junctions, IEEE Trans. Nucl. Sci., 53, 3 (2006).

DOI: https://doi.org/10.1109/tns.2006.872202

[3] K. K. Lee, T. Ohshima, and H. Itoh, Performance of Gamma Irradiated P-Channel 6H-SiC MOSFETs: High Dose, IEEE Trans. Nucl. Sci., 50, 1 (2003) 194–200.

DOI: https://doi.org/10.1109/tns.2002.807853

[4] T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie, Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region, Jpn. J. Appl. Phys., 55 (2016).

DOI: https://doi.org/10.7567/jjap.55.01ad01

[5] S. S. Suvanam, S. Kuroki, L. Lanni, R. Hadayati, T. Ohshima, T. Makino, A. Hallen, and C. M. Zetterling, High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits, IEEE Trans. Nucl. Sci., 64, 2 (2017) 852–858.

DOI: https://doi.org/10.1109/tns.2016.2642899