Evaluation of Wafer Drying Methods for GIGA-LEVEL Device Fabrication


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This study deals with drying induced water marks dependency on the last cleaning methods, substrate conditions, and drying pre-step delaying times, which are supposed to become a big issue with down scaling of device geometry. The data show that water marks induced by drying failure increase with increasing contact angle on the various surfaces. They are mainly composed of either silicon oxide only or silicon oxide with organic compounds. The former is removed by a dilute HF and/or hot SC-1 treatment and the latter is removed by organic removal cleaning followed by dilute HF etching.



Solid State Phenomena (Volumes 103-104)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns




G. H. Kim et al., "Evaluation of Wafer Drying Methods for GIGA-LEVEL Device Fabrication", Solid State Phenomena, Vols. 103-104, pp. 67-70, 2005

Online since:

April 2005




[1] Wilke K. et al., Solid State Technology, 1996, 39, 87-90.

[2] Peters L et al., Semiconductor International, 1998, August, 83-90.

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