Occurrence of Arsenic-Based Defects and Techniques for Their Elimination

Abstract:

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Arsenic based defects were found on the surfaces of advanced CMOS patterned wafers after the pre-silicidation HF clean. Investigations into the mechanism of formation were done using representative As-implanted bare silicon, polysilicon and HDP silicon oxide films. The nature and composition of these As-based defects are believed to be arsenic and arsenic oxide. Methods of defect removal include the application of hydrogen peroxide containing solutions and hydrogen plasma dry cleaning.

Info:

Periodical:

Solid State Phenomena (Volumes 103-104)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

87-92

DOI:

10.4028/www.scientific.net/SSP.103-104.87

Citation:

F. Goh et al., "Occurrence of Arsenic-Based Defects and Techniques for Their Elimination", Solid State Phenomena, Vols. 103-104, pp. 87-92, 2005

Online since:

April 2005

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Price:

$35.00

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