Study of Au Diffusion in Nitrogen-Doped FZ Si
Depth profiles of Au in nitrogen-doped FZ p-Si have been studied by the DLTS after diffusion at 680 - 730°C. It was shown that the Au depth profile could be described by trap-limited diffusion. To explain the experimental profiles the existence of two traps with different capture radius should be assumed. A formation of new electrically active center is detected at a depth close to that of sharp decay in Au concentration. This center is assumed to be a result of Au capture by nitrogen-vacancy complexes and could be associated with the substitutional gold neighboring nitrogen and/or vacancy.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
E. B. Yakimov "Study of Au Diffusion in Nitrogen-Doped FZ Si ", Solid State Phenomena, Vols. 108-109, pp. 241-244, 2005