Study of Au Diffusion in Nitrogen-Doped FZ Si

Abstract:

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Depth profiles of Au in nitrogen-doped FZ p-Si have been studied by the DLTS after diffusion at 680 - 730°C. It was shown that the Au depth profile could be described by trap-limited diffusion. To explain the experimental profiles the existence of two traps with different capture radius should be assumed. A formation of new electrically active center is detected at a depth close to that of sharp decay in Au concentration. This center is assumed to be a result of Au capture by nitrogen-vacancy complexes and could be associated with the substitutional gold neighboring nitrogen and/or vacancy.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

241-244

DOI:

10.4028/www.scientific.net/SSP.108-109.241

Citation:

E. B. Yakimov "Study of Au Diffusion in Nitrogen-Doped FZ Si ", Solid State Phenomena, Vols. 108-109, pp. 241-244, 2005

Online since:

December 2005

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Price:

$35.00

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