On the Effect of Lead on Irradiation Induced Defects in Silicon
Different group IV impurities (Pb, C, and Sn) have been introduced in the melt during the growth of n-type Czochralski silicon. The samples have been irradiated with 1 MeV electrons to a fluence of 4x1015cm-2. The irradiation-induced defects have been studied by Deep Level Transient Spectroscopy (DLTS). It is shown that the formation of one of the irradiation-induced deep level is avoided by the Pb-doping. This level is located at 0.37 eV from the conduction band edge (EC) and shows an apparent capture cross-section of 7x10-15cm2. In addition, another irradiation induced deep level located at EC - 0.32 eV has been studied in more details.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
M.-L. David et al., "On the Effect of Lead on Irradiation Induced Defects in Silicon", Solid State Phenomena, Vols. 108-109, pp. 373-378, 2005