Theoretical Investigations of the Diffusion of Nitrogen-Pair Defects in Silicon

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Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

407-412

DOI:

10.4028/www.scientific.net/SSP.108-109.407

Citation:

N. Fujita et al., "Theoretical Investigations of the Diffusion of Nitrogen-Pair Defects in Silicon", Solid State Phenomena, Vols. 108-109, pp. 407-412, 2005

Online since:

December 2005

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$35.00

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