Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods
We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates were formed in bulk silicon through illumination at room temperature. We observed that the recombination activities of copper precipitates measured with SPV are higher than the ones measured with µ−PCD technique. However, it seems that the copper detection sensitivity is about the same with SPV and µ−PCD techniques.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
M. Yli-Koski et al., "Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods", Solid State Phenomena, Vols. 108-109, pp. 643-648, 2005