Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods

Abstract:

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We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates were formed in bulk silicon through illumination at room temperature. We observed that the recombination activities of copper precipitates measured with SPV are higher than the ones measured with µ−PCD technique. However, it seems that the copper detection sensitivity is about the same with SPV and µ−PCD techniques.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

643-648

DOI:

10.4028/www.scientific.net/SSP.108-109.643

Citation:

M. Yli-Koski et al., "Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods", Solid State Phenomena, Vols. 108-109, pp. 643-648, 2005

Online since:

December 2005

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Price:

$35.00

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