6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy
Investigation of the multilayer 6H(n+)/3C(n)/6H(p+)-SiC heterostructure grown by sublimation epitaxy show that the injection electroluminescence (IEL) in the green region (hνmax≈2.30-2.35eV) of spectrum is dominant. This band is close to the electroluminescence peak due to defects in 6H-SiC but also can be due to free exciton annihilation in a quantum well in 3C-SiC at the 6H/3C-SiC heterointerface. At high current the IEL peak at hνmax≈2.9 eV is found. This peak (and also two another peaks in blue part of spectra: hνmax≈2.6 eV and hνmax≈2.72 eV) can be attributed to recombination in 6H-SiC. The forward current-voltage characteristics for best structures are close to those for ideal 6H-SiC pn homostructure and characterized by abrupt breakdown. A lot of structures are characterized by barrier type excess current. Structure in the region of evident 3C-SiC inclusion is characterized by high forward and reverse excess currents.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
A. M. Strel'chuk et al., "6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy ", Solid State Phenomena, Vols. 108-109, pp. 713-716, 2005