Fabrication and Physical Properties of SiC-GaAs Nano-Composites
Nano-composites consisting of a primary matrix phase of hard nanocrystalline SiC and a secondary nanocrystalline GaAs semiconductor phase were obtained by high-pressure zone infiltration. The synthesis occurs in three stages: (i) at room- temperature the SiC nanopowder is compacted under high pressure to 8 GPa, (ii) the temperature is increased to 1240°C, above the melting point of GaAs, and the pores were filled with liquid, (iii) on cooling GaAs nanocrystallites grow in the pores. The synthesis was performed using a toroid-type high-pressure apparatus (IHPP PAS, Warsaw) and a six anvil cubic press (MAX80 at HASYLAB, Hamburg). X-ray diffraction studies were performed with a laboratory D5000 Siemens diffractometer. The phase compositionn, grain size and macrostrains in the synthesized materials were examined. The microstructure of the composites was characterized using a Scanning Electron Microscopy (SEM), and High Resolution Transmission Electron Microscopy (TEM). Far-infrared reflectivity and Raman spectroscopy measurements were used to trace built-in strains.
Witold Lojkowski and John R. Blizzard
G. Kalisz et al., "Fabrication and Physical Properties of SiC-GaAs Nano-Composites", Solid State Phenomena, Vol. 114, pp. 297-302, 2006