Synthesis of Pb1-xYbx(Zr0.52Ti0.48)O3 Nanopowders by a Modified Sol-Gel Process Using Zirconium Oxynitrate Source


Article Preview

Ferroelectric lead zirconate titanate(PZT)thin films have attracted great attention because of their potential applications in memory devices[1] due to their unique properties, for example, hysteresis loop and high dielectric constant. To realize these memory devices, it is necessary to overcome the reliability problems such as fatigue, retention and imprint. It is well known that lead base perovskite family ferroelectric thin films with donor dopant such as La3+ and Nb5+ have improved the electrical properties of PZT thin films effectively [2-3]. And it is proposed that the cation substitution could reduce the number of defects such as oxygen vacancies, which could promote electrical fatigue and leakage current of PZT ferroelectric thin films obviously. In the present study, rare earth Yb-doped lead zirconium titanate (PYZT) nanocrystalline powders with a composition near the morphotropic phase boundary (Zr/Ti=52/48) were prepared by a modified sol-gel method. DTA/TG and XRD were used to determine the thermal and phase changes in the formation of PYZT crystalline powders. The effect of Yb3+ cation substitution for Pb2+ cation on the microstructure of PZT was developed with XRD. The grain size of PYZT nanopowders is about 40 nm determined by TEM.



Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU






Q. Sun et al., "Synthesis of Pb1-xYbx(Zr0.52Ti0.48)O3 Nanopowders by a Modified Sol-Gel Process Using Zirconium Oxynitrate Source", Solid State Phenomena, Vols. 121-123, pp. 223-226, 2007

Online since:

March 2007




[1] J.F. Scott and C.A. Paz de Araujo: Science. Vol 246(1989), P. 1400.

[2] Q. Zhou, H. Ruda, B.G. Yacobi: Thin Solid Films. Vol 402, (2002), P. 65.

[3] Alexander K. Tagantsev, Keith G. Brooks, Nava Setter: J. Am. Ceram. Soc. Vol 80(1997) , P. 336.

[4] M. Bexell, S. Johansson: Sensors Actuators A: Phys. Vol 75, (1999), P. 8.

[5] M.K. Kurosawa: Integrated Ferroelectrics. Vol 25, (1999), P. 10.

[6] H. Kown: Integrated Ferroelectr. Vol 25, (1999), P. 187.

[7] Y.Q. Liu: Integrated Ferroelectr. Vol 25, (1999), P. 21.

[8] Y.J. Yu , H.L.W. Chan , F.P. Wang: Microelectronic Engineering. Vol 66, (2003), P. 726.

[9] Y. Song: Ph. D Dissertation of Harbin Institute of Technology. (2000).

[10] Yongkang GAO, Yun-Han CHEN, Jungho RYU etall: Jpn. J. Appl. Phys., Vol 40, (2001), P687.

[11] J. F. Scott, C. A. Araujo, B. M. Melnick etal: J. Appl. Phys. Vol 70, (1991) , P382.

In order to see related information, you need to Login.