Electrochemical Pore Etching in n- and p-Type Ge


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Little was known about porous Ge until recently; here some substantial progress in producing porous Ge will be reported, mostly for the first time. i) n-type Ge in aqueous solution: Pore geometries, morphologies and growth peculiarities were found to be quite different from other semiconductors, such as Si and III-V. Nucleation is generally difficult, the preferred growth direction is <100> (and <111>), major stop planes are of the {110} type, but others are also found. In addition, there is always a strong electropolishing component compromising pore geometry and stability. ii) n- and p-type Ge in organic solution: In DMSO solution, the growth direction is <111>, and the stopping planes are still mainly {110}; somewhat unexpected, because this has never been observed in Si, and because no pores have been found in other p-type semiconductors so far, with the exception of Si. Nucleation seems to be difficult too, and new domain-forming phenomena are observed. Smooth or rough pore walls can be obtained, dependent on the experimental conditions.



Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU






C. Fang et al., "Electrochemical Pore Etching in n- and p-Type Ge", Solid State Phenomena, Vols. 121-123, pp. 37-40, 2007

Online since:

March 2007




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