Small-Signal Circuit Elements of MIS-Type Nanostructures

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Starting from a mean field calculation for the static capacitance of a MIS-nanostructure with a near back gate [P.N. Racec, E. R. Racec and U. Wulf, Phys. Rev. B 65, 193314, (2002)] we develop an approach to determine the equivalent small-signal circuit. The analyzed system has an open character, taken into account in the Landauer-Büttiker formalism. The Coulomb interaction is treated in Hartree approximation. Consistent with our static calculations we determine the charge-charge correlation function in the random phase approximation to find the ac-admittances. The small-signal circuit consists of a voltage-dependent capacitance and a resistance in series. Beyond a characteristic frequency c ν they become frequency dependent. The characteristic frequency is given by the life time of specific resonance which develops in the system.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

549-552

Citation:

P.N. Racec and U. Wulf, "Small-Signal Circuit Elements of MIS-Type Nanostructures", Solid State Phenomena, Vols. 121-123, pp. 549-552, 2007

Online since:

March 2007

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$38.00

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