High Quality Epitaxial Pt Films Grown on γ-Al2O3/Si (111) Substrates
Epitaxial Pt films were grown on γ-Al2O3/Si (111) substrate by RF-magnetron sputtering. The γ-Al2O3 buffer layers were grown epitaxially using molecular beam epitaxy. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM). The results of XRD showed that high-quality Pt films were obtained at around 560°C. In addition, the Pt films exhibited a very smooth surface with the root-mean-square (rms) surface roughness is about 0.4 nm.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
M. Ito et al., "High Quality Epitaxial Pt Films Grown on γ-Al2O3/Si (111) Substrates", Solid State Phenomena, Vols. 124-126, pp. 181-184, 2007