High Quality Epitaxial Pt Films Grown on γ-Al2O3/Si (111) Substrates

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Epitaxial Pt films were grown on γ-Al2O3/Si (111) substrate by RF-magnetron sputtering. The γ-Al2O3 buffer layers were grown epitaxially using molecular beam epitaxy. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM). The results of XRD showed that high-quality Pt films were obtained at around 560°C. In addition, the Pt films exhibited a very smooth surface with the root-mean-square (rms) surface roughness is about 0.4 nm.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

181-184

DOI:

10.4028/www.scientific.net/SSP.124-126.181

Citation:

M. Ito et al., "High Quality Epitaxial Pt Films Grown on γ-Al2O3/Si (111) Substrates", Solid State Phenomena, Vols. 124-126, pp. 181-184, 2007

Online since:

June 2007

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$35.00

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