Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature
Indium tin oxide (ITO) CMP was performed by change of de-ionized water (DIW) temperature in pad conditioning process. DIW with high temperature was employed in pad conditioning immediately before ITO-CMP. The removal rate of ITO thin film polished by silica slurry immediately after pad conditioning process with the different DIW temperatures dramatically increased to 93.0 nm/min after pad conditioning at DIW of 75 oC, while that after the general conditioning process at 30 oC was about 66.1 nm/min. The grains of ITO thin film became indistinguishable by CMP after pad conditioning with the high-temperature DIW. The carrier density decreased with the increase of conditioning temperature. The hall mobility rapidly increased regardless of conditioning temperature. The uniformity of optical transmittance also improved.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
N. H. Kim et al., "Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature", Solid State Phenomena, Vols. 124-126, pp. 263-266, 2007