The Hydrogen Heat Treatment Effect on Electrical and Structural Properties of a-SiOC:H as Low-k Thin Films

Abstract:

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Various annealing conditions after film deposition have a great effect on electrical and structural properties of low-k films. In this work, we studied hydrogen atmosphere heat treatment effect on low-k films. After the room temperature deposition of a-SiOC:H low-k films following post-deposition-annealing (PDA) for 30 min. at 450°C in an N2 ambient, final annealing was performed for 30 min. at 400°C in an N2, a forming gas 1 (5% H2 + 95% N2), and a forming gas 2 (10% H2 + 90% N2) ambient. The flat band voltage was shifted toward the ideal value of 0.61V after two forming gas anneals, but it increased k values of the films. It was ascribed that hydrogen effectively substitutes defect sites or structural imperfections of low-k films and makes the film more hydrophilic. The FT-IR, XPS analyses and the contact angle measurement supported our conclusion.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

323-326

DOI:

10.4028/www.scientific.net/SSP.124-126.323

Citation:

J. Y. Heo and H. J. Kim, "The Hydrogen Heat Treatment Effect on Electrical and Structural Properties of a-SiOC:H as Low-k Thin Films", Solid State Phenomena, Vols. 124-126, pp. 323-326, 2007

Online since:

June 2007

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$35.00

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