Post-Annealing Effect of SiON Thin Film in Air
About 2-thick, amorphous SiON thin films were deposited by the PECVD method, and heated up to 1000oC in air to study the post-annealing effect on the composition and structure of the SiON film. SiON had a strong SiO2 binding energy with a weak N-binding, so that air-annealing resulted in nitrogen escape from the film. The inwardly transported oxygen from the atmosphere was simply supersaturated inside the annealed, amorphous SiON thin film.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
D. B. Lee and D. H. Yoon, "Post-Annealing Effect of SiON Thin Film in Air", Solid State Phenomena, Vols. 124-126, pp. 463-466, 2007