Post-Annealing Effect of SiON Thin Film in Air

Abstract:

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About 2-thick, amorphous SiON thin films were deposited by the PECVD method, and heated up to 1000oC in air to study the post-annealing effect on the composition and structure of the SiON film. SiON had a strong SiO2 binding energy with a weak N-binding, so that air-annealing resulted in nitrogen escape from the film. The inwardly transported oxygen from the atmosphere was simply supersaturated inside the annealed, amorphous SiON thin film.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

463-466

DOI:

10.4028/www.scientific.net/SSP.124-126.463

Citation:

D. B. Lee and D. H. Yoon, "Post-Annealing Effect of SiON Thin Film in Air", Solid State Phenomena, Vols. 124-126, pp. 463-466, 2007

Online since:

June 2007

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Price:

$35.00

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