Post-Annealing Effect of SiON Thin Film in Air


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About 2-thick, amorphous SiON thin films were deposited by the PECVD method, and heated up to 1000oC in air to study the post-annealing effect on the composition and structure of the SiON film. SiON had a strong SiO2 binding energy with a weak N-binding, so that air-annealing resulted in nitrogen escape from the film. The inwardly transported oxygen from the atmosphere was simply supersaturated inside the annealed, amorphous SiON thin film.



Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park




D. B. Lee and D. H. Yoon, "Post-Annealing Effect of SiON Thin Film in Air", Solid State Phenomena, Vols. 124-126, pp. 463-466, 2007

Online since:

June 2007





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50 100 150 200 250 300 Si substrate Temp. curve SiON film Mass Gain (x10-2 mg / cm2) Time (min) Temperature (x102 o C).

[2] [4] [6] [8] [1] [0] [0] [2] [4] [6] [8] [1] [0] �� (a) (b) (b) (b) Si O N SiON Si substrate Fig. 7. Weight change vs. temperature curves of SiON film and Si in air, which were measured during heating from room temperature to 1000 o C with a heating rate of 4o C/min, and the subsequent cooling in TGA.