Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures
Inductively coupled plasma reactive ion etching of Ge doped silica glasses and SiON was investigated, using C2F6- and NF3-based gas mixtures. Mesas with smooth surfaces and vertical sidewalls were obtained, with a maximum etch rate of about 310nm/min in the case of C2F6 RIE of Ge-SiO2 and 280 nm/min in the case of SiON. The NF3 plasma yielded slightly higher etch rate, although sloped sidewalls were obtained. Results of the X-ray photoelectron spectroscopy showed little contamination on the etched surfaces.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
N.J. Kim et al., "Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures", Solid State Phenomena, Vols. 124-126, pp. 503-506, 2007