Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures


Article Preview

Inductively coupled plasma reactive ion etching of Ge doped silica glasses and SiON was investigated, using C2F6- and NF3-based gas mixtures. Mesas with smooth surfaces and vertical sidewalls were obtained, with a maximum etch rate of about 310nm/min in the case of C2F6 RIE of Ge-SiO2 and 280 nm/min in the case of SiON. The NF3 plasma yielded slightly higher etch rate, although sloped sidewalls were obtained. Results of the X-ray photoelectron spectroscopy showed little contamination on the etched surfaces.



Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park






N.J. Kim et al., "Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures", Solid State Phenomena, Vols. 124-126, pp. 503-506, 2007

Online since:

June 2007





[1] S.T. JUNG, H. S. SONG, D. S. Kim, Y. H. SONG, T. H. KIM, and H. S. KIM, J. Non-crystalline solid. Vol. 259 (1999), p.191.

[2] T. HATTORI, S. SEMURA, and N. AKASAKA, Jpn. J. Appl. Phys. Vol. 38 (1999), p.2775.

[3] R. GERMANN, H. W. M. SALEMINK, R. BEYELER, G. L. BONA, F. HORST, I. MASSAREK and B. J. Offrein, Electrochemical Society. Vol. 147 (2000), p.2237.

DOI: 10.1149/1.1393513

[4] K. WORHOFF, A. DRIESSEN, P. V. LAMBECK, L. T. H. HILDERINK, P. W. C. LINDERS, Th. J. A. Popma, Sensors and Actuators. A. Vol. 74 (1999), p.9.

[5] M. SCHAEPKENS and G. S. OEHRLEIN, J. Electrochem Soc. Vol. 148 (2001), p. C211.

[6] J. FELDSIEN, D. KIM, and D. J. ECONOMOU, Thin Solid Films. Vol. 374 (2000), p.311.

[7] S. K. PANI, C. C. WONG, K. SUDHARSANAM, S. G. MHAISALKAR, V. LIM, S. MOHANRAJ, P. V. RAMANA, Thin Solid Films. Vol. 462-463 (2004), p.471.

DOI: 10.1016/j.tsf.2004.05.065

[8] T. W. LITTLE and F. S. OHUCHI, Surface Science. Vol. 445 (2000), p.235.

[9] N. MEKKAKIA MAAZA, A. BOUDGHENE STAMBOULI, Thin Solid Films. Vol. 458 (2004), p.309.

DOI: 10.1016/j.tsf.2003.11.309

[10] B. H. KIM, S. M. KONG, and B. T. LEE, J. Vac. Sci. Technol. A. Vol. 20 (2002), p.146 (c) (a) (b) (d) Trenching (c) (d) (a) (b) 0 400 800 F 1s O 1s C 1s Si 2p (b) (a) Intensity(cps) Binding energy(eV).

In order to see related information, you need to Login.