Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures

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Inductively coupled plasma reactive ion etching of Ge doped silica glasses and SiON was investigated, using C2F6- and NF3-based gas mixtures. Mesas with smooth surfaces and vertical sidewalls were obtained, with a maximum etch rate of about 310nm/min in the case of C2F6 RIE of Ge-SiO2 and 280 nm/min in the case of SiON. The NF3 plasma yielded slightly higher etch rate, although sloped sidewalls were obtained. Results of the X-ray photoelectron spectroscopy showed little contamination on the etched surfaces.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

503-506

DOI:

10.4028/www.scientific.net/SSP.124-126.503

Citation:

N.J. Kim et al., "Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures", Solid State Phenomena, Vols. 124-126, pp. 503-506, 2007

Online since:

June 2007

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$35.00

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