Influence of Ion Bombardment of Sapphire on Electrical Property of GaN Layer

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Ion beam bombardment of proton, He+, Ar+, Xe+ ions were made on single crystal substrate by cyclotron. The GaN epi-layer material was grown by MOCVD on ion beam bombarded substrate. After deposition of GaN epi-layer heat treatment was made in flow of N2. The RMS roughness of the substrate was increased by ion bombardment. The GaN crystal quality for substrates of ion bombardment was better than that for bare substrates. Raman spectrum analysis indicated the induced stress in the GaN epi-layer during the heat treatment. The electrical property of GaN was improved after heat treatment. It is estimated that ion bombardment of proton with current of 1μA is the optimum condition in our experimental condition.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

615-618

DOI:

10.4028/www.scientific.net/SSP.124-126.615

Citation:

S. K. Choi et al., "Influence of Ion Bombardment of Sapphire on Electrical Property of GaN Layer", Solid State Phenomena, Vols. 124-126, pp. 615-618, 2007

Online since:

June 2007

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Price:

$35.00

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