Prospects of Potential Semiconductor Spin Detectors

Abstract:

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We review our recent experimental findings by optical orientation spectroscopy that show efficient spin relaxation within semiconductor spin detectors to be an important factor limiting efficiency of spin injection in spin light-emitting structures based on ZnCdSe/ZnMnSe and InGaN/GaMnN. We provide evidence for the physical mechanism responsible for the observed efficient spin relaxation that accompanies momentum and energy relaxation of excitons/carriers. These findings call for increasing efforts in suppressing spin relaxation in spin detectors.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

839-842

DOI:

10.4028/www.scientific.net/SSP.124-126.839

Citation:

W.M. Chen et al., "Prospects of Potential Semiconductor Spin Detectors", Solid State Phenomena, Vols. 124-126, pp. 839-842, 2007

Online since:

June 2007

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Price:

$35.00

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