Characteristics of Indium Zinc Oxide Thin Films Deposited by Radio Frequency Reactive Magnetron Sputtering for Solar Cells Application

Abstract:

Article Preview

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

999-1002

DOI:

10.4028/www.scientific.net/SSP.124-126.999

Citation:

H. N. Cho et al., "Characteristics of Indium Zinc Oxide Thin Films Deposited by Radio Frequency Reactive Magnetron Sputtering for Solar Cells Application", Solid State Phenomena, Vols. 124-126, pp. 999-1002, 2007

Online since:

June 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.