Structure of Magnetically Ordered Si:Mn


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The structure studies of single crystalline silicon implanted at 340 K or 610 K with Mn+ ions (Si:Mn) and subsequently processed under atmospheric and enhanced hydrostatic pressure at up to 1270 K are reported. The defect structure was determined by an analysis of X-ray diffuse scattering around the 004 reciprocal lattice point and by electron microscopy. High resolution X-ray diffraction techniques based on the conventional source of radiation were used for this purpose. The crystal structure of Si:Mn and the Si1-xMnx precipitates in the implantation – disturbed layer were studied by synchrotron radiation diffraction in the grazing incidence geometry. Processing of Si:Mn results in crystallization of amorphous Si within the buried implantation – disturbed layer and in formation of Mn4Si7 precipitates. Structural changes are dependent both on temperature of the Si substrate at implantation and on processing parameters.



Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini






J. Bak-Misiuk et al., "Structure of Magnetically Ordered Si:Mn", Solid State Phenomena, Vols. 131-133, pp. 327-332, 2008

Online since:

October 2007




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