Hydrogen Interaction with Point Defects in the Si-SiO2 Structures and its Influence on the Interface Properties

Abstract:

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The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. Interaction between the point defects with extended defects and impurities affects the SiO2 structure and Si-SiO2 interface properties. Hydrogen adsorption on n- and p- type wafers is different. One possible reason for that can be the strength of the magnetic interaction between the hydrogen and paramagnetic impurities of the adsorbent. The influence of point defects and impurities may be diminished and the interface properties improved by an appropriate choice of the oxidation conditions and postoxidation laser irradiation.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

345-350

DOI:

10.4028/www.scientific.net/SSP.131-133.345

Citation:

D. Kropman et al., "Hydrogen Interaction with Point Defects in the Si-SiO2 Structures and its Influence on the Interface Properties", Solid State Phenomena, Vols. 131-133, pp. 345-350, 2008

Online since:

October 2007

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Price:

$35.00

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