The Role of High Temperature Treatments in Stress Release and Defect Reduction

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In this work we discuss an original analysis about a method to reduce the dislocation density in the devices that use the Shallow Trench Isolation (STI). It is well known that a high mechanical stress in silicon combined with an amorphizing implantation damage can generate many dislocations. So we propose to release the mechanical stress in silicon before implanting. A high temperature treatment indeed can trigger the viscous behaviour of the filling oxide inducing the relaxation of the stress field in silicon. For the first time a systematic study of the effect of different furnace and RTP annealings in the stress relaxation was done by Raman measurements. Different temperatures (from 3000C to 11000C) and different durations (from few seconds to one hour) were explored and the experimental results were compared with the numerical simulation with a good agreement. Finally we study the effect of the most promising annealings selected by Raman in a complete process flow.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

369-374

DOI:

10.4028/www.scientific.net/SSP.131-133.369

Citation:

I. Mica et al., "The Role of High Temperature Treatments in Stress Release and Defect Reduction", Solid State Phenomena, Vols. 131-133, pp. 369-374, 2008

Online since:

October 2007

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$35.00

[1] T. Kuroi, T. Uchida, K. Horita, M. Sakai, Y. Itoh, Y. Inoue, and T. Nishimura, IEDM Tech. Digest, (1998), p.141.

[2] I. Mica, M.L. Polignano, G.P. Carnevale, A. Armigliato, R. Balboni, M. Brambilla, F. Cazzaniga, G. Pavia and V. Soncini, Solid State Phenom., vol. 95-96, (2004), p.439.

DOI: 10.4028/www.scientific.net/ssp.95-96.439

[3] C.S. Rafferty, PhD Thesis, Stanford University, (October 1998).

[4] P. Saturdja and W.G. Oldham, IEEE Trans. Electron. Devices, vol. 36(11), (1989), p.2415.

[5] G. Charitat, A. Martinez, J. Appl. Phys, vol. 55(4), (1984), p.909.

[6] P. Ferreira, R.A. Bianchi, F. Guyader et al.: ESSDERC Proc. (Warrendale, PA: Material Research Society), (2001), p.

[7] I. Mica, M.L. Polignano, C. De Marco, Mat. Sci. Eng. B, vol. 114-115, (2004), p.299.

[8] E. Bonera, M. Fanciulli, M. Mariani, Appl. Phys. Lett., 87, (2005), p.111913.

[9] T. Hoffmann, P. Le Duc, V. Senez, J. Vac. Sci. Tech B, vol. 17(6), (1999), p.2603.

[10] Synopsys User manuals, DIOS release 9. 0.

[11] E. Bonera, M. Fanciulli, G.P. Carnevale, J. Appl. Phys, vol. 100(3), (2006), p.33516.

[12] M.L. Polignano, G.P. Carnevale, P. Fantini, I. Mica, 210th ECS Meeting., 602, 1221 (2006) Fig. 6: Number of dislocations in samples with and without the annealing at 10500C. The data are obtained by SEM inspection after Secco etching.

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