Photoinduced Variation of Capacitance Characteristics of MDS Structures with Three-Layer SiNx Dielectrics

Abstract:

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Characterisation of three-layer dielectric embedded into MDS-structure (Metal- Dielectric-Silicon) was provided in the dark and under light illumination. In the dark, increasing of differential capacitance, simultaneously, with variation of differential conductivity of MDSstructures was detected. In the light strong changing of capacitance part of impedance was firstly observed, demonstrating decreasing almost to zero values and restoring up to maximal values in narrow bang of voltage applied. Variation of capacitance exceeds significantly so called dielectric layer capacitance, what interpreted as carriers exchanging between substrate and electronic states in SiNx probably due to three-layered kind of its nature.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

461-466

DOI:

10.4028/www.scientific.net/SSP.131-133.461

Citation:

S. A. Arzhannikova et al., "Photoinduced Variation of Capacitance Characteristics of MDS Structures with Three-Layer SiNx Dielectrics", Solid State Phenomena, Vols. 131-133, pp. 461-466, 2008

Online since:

October 2007

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$35.00

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