Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors
Terahertz-range photoluminescence from silicon-germanium crystals and superlattices doped by phosphor has been studied under optical excitation by radiation from a mid-infrared CO2 laser at low temperature. SiGe crystals with a Ge content between 0.9 and 6.5 %, doped by phosphor with a concentration optimal for silicon laser operation, do not exhibit terahertz gain. On the contrary, terahertz-range gain of ~ 2.3 - 3.2 cm-1 has been observed for donor-related optical transitions in Si/SiGe strained superlattices at pump intensities above 100 kW/cm2.
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
S. G. Pavlov, H. W. Hübers, N. V. Abrosimov, H. Riemann, H.H. Radamson, N.A. Bekin, A.N. Yablonsky, R.K. Zhukavin, Y.N. Drozdov , V.N. Shastin, "Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors", Solid State Phenomena, Vols. 131-133, pp. 613-618, 2008