Electroluminescence from ZnO/n+-Si Heterojunction


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The ZnO/n+-Si heterojunction has been fabricated via depositing nominally undoped ZnO film by reactive sputtering on a heavily arsenic-doped (n+) silicon substrate. The sputtered ZnO film was n-type in conductivity with an electron concentration of 1.0×1018 cm-3. The current-voltage characteristics indicate that the ZnO/n+-Si heterojunction does not possess rectifying function. Under the forward bias with the negative voltage applied on the n+-Si substrate, the heterojunction emits ultraviolet and broad visible lights characteristics of near-band-edge and defect-related emissions of ZnO, respectively. The EL mechanism has been tentatively explained in terms of the energy-band diagram.



Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini




X. Y. Ma et al., "Electroluminescence from ZnO/n+-Si Heterojunction", Solid State Phenomena, Vols. 131-133, pp. 625-628, 2008

Online since:

October 2007




[1] S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, Prog. Mater. Sci. Vol. 50 (2005), p.293.

[2] D. C. Look, Semicond. Sci. Tech. Vol. 20 (2005), p. S55.

[3] Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, et al., J. Appl. Phys. Vol. 98 (2005), p.041301.

[4] C. H. Park, I. S. Jeong, J. H. Kim, and Seongil Im, Appl. Phys. Lett. Vol. 82 (2003), p.3973.

[5] P. L. Chen, X. Y. Ma, and D. R . Yang, J. Appl. Phys. Vol. 101 (2007), p.053103.

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