Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon
The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0- 10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations.
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
J. Chen et al., "Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon", Solid State Phenomena, Vols. 131-133, pp. 9-14, 2008