Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

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The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0- 10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

9-14

DOI:

10.4028/www.scientific.net/SSP.131-133.9

Citation:

J. Chen et al., "Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon", Solid State Phenomena, Vols. 131-133, pp. 9-14, 2008

Online since:

October 2007

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$35.00

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