Insights into HF-Last Processes and Particle Performance in a Single Wafer Spin Cleaning Tool

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Solid State Phenomena (Volume 134)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

15-18

DOI:

10.4028/www.scientific.net/SSP.134.15

Citation:

G. Chen and I. Kashkoush, "Insights into HF-Last Processes and Particle Performance in a Single Wafer Spin Cleaning Tool", Solid State Phenomena, Vol. 134, pp. 15-18, 2008

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November 2007

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[10] J. Lauerhaas: IMEC/Verteq Annual Report Nov. 2001. Figure. 1: Residual oxide vs. HF concentration and etch Figure. 2: Effects of etch time on particle addition. time. Figure 3: Particle addition to hydrophobic wafers after different spinning speeds of DI rinse and drying methods. Figure 4: Particle results between DI and HF rinse. Figure 5: Effects of dissolved gas in rinse water on particle addition in HF-last processes. Figure 6: Effects of IPA vapor concentration on particle Figure. 7: Effects of chamber exhaust on particle addition in HF-last processes. addition in HF-last processes.

DOI: 10.4028/www.scientific.net/ssp.65-66.35

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