A Study on Water-Mark Defects in Copper/Low-k Chemical Mechanical Polishing

Abstract:

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The prevention of watermark defect after copper/low-k CMP is a critical barrier for the successful integration of sub-100 nm devices. The water-mark can act as a leakage source and cause electrical shorts. The mechanism of water-mark formation during Cu/low-k CMP is suggested and its prevention methods are proposed in this study. A suitable surfactant treatment can improve the wettability of low-k films and reduce the watermark defects very effectively. The relatively stable low-k film surface is activated during polishing and prone to adsorb surfactant molecules during cleaning, which results in the reduction of water-marks after CMP. Another solution to eliminate water-mark is the application of IPA dryer in post CMP cleaning.

Info:

Periodical:

Solid State Phenomena (Volume 134)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

295-298

DOI:

10.4028/www.scientific.net/SSP.134.295

Citation:

J. H. Han et al., " A Study on Water-Mark Defects in Copper/Low-k Chemical Mechanical Polishing", Solid State Phenomena, Vol. 134, pp. 295-298, 2008

Online since:

November 2007

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Price:

$35.00

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