Developing a High Volume Manufacturing Wet Clean Process to Remove BF2 Implant Induced Molybdenum Contamination

Abstract:

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This work details the investigation of potential problems in Complimentary BiCMOS technology, especially PNP transistors arrays. Optical examination of the wafer revealed defects in the P Buried Layer (PBL) areas of the die. Electrical testing correlated these PBL defects to PNP array current leakage. As the PBL module is completed very early on in the process, we devised a shortloop (SL) to reproduce these defects and identify the root cause of current leakage.

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

127-130

DOI:

10.4028/www.scientific.net/SSP.145-146.127

Citation:

A. Sehgal et al., "Developing a High Volume Manufacturing Wet Clean Process to Remove BF2 Implant Induced Molybdenum Contamination", Solid State Phenomena, Vols. 145-146, pp. 127-130, 2009

Online since:

January 2009

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Price:

$35.00

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